– Delivers 12-high HBM4E samples to main clients
– Achieves a most pace of 16Gbps per pin with enhancements in each efficiency and effectivity
– Makes use of Superior MR-MUF, decreasing warmth resistance by 17% whereas bettering stability
– SK hynix strengthens its AI management with HBM4E based mostly on its market-leading technological capabilities and manufacturing experience… delivering the worth wanted within the market
SEOUL, South Korea, June 18, 2026 /PRNewswire/ — SK hynix Inc. (or “the corporate”, www.skhynix.com) introduced at present that it has shipped samples of HBM4E, a next-generation DRAM for AI, to main clients.
“The corporate was in a position to ship samples of the 12-stack HBM4E on schedule because of its superior HBM growth and manufacturing experience for HBM,” stated SK hynix, including that “We are going to work carefully with companions for mass manufacturing in a well timed method.”
The 12-layer HBM4E reveals enhancements in each efficiency and energy effectivity. The product encompasses a most knowledge processing pace of 16Gbps per pin and energy effectivity that’s up greater than 20 p.c from earlier fashions. These enhancements enhance knowledge processing capabilities for AI coaching and inference.
The HBM4E reduces knowledge switch latency by means of its newest interface and design optimization whereas sustaining secure operation in high-bandwidth environments. This allows clients to extend effectivity in processing knowledge for AI knowledge facilities and large-scale computing programs.
SK hynix makes use of Superior MR-MUF1 expertise for HBM4E merchandise to realize a 48GB capability in a 12-layer stack whereas making certain structural stability. Particularly, the corporate has additionally improved warmth resistance by 17 p.c, in comparison with the previous HBM4, enabling secure operation of reminiscence chips in high-performance computing environments.
1MR-MUF (Mass Reflow Molded Underfill): A course of used for stacking semiconductors by injecting liquid protecting supplies between chips to guard circuits.
SK hynix has efficiently provided optimized reminiscence options to clients based mostly on its experience within the mass manufacturing and provide of HBM3, HBM3E, and HBM4. Leveraging its market-proven product reliability and provide capabilities, the corporate will assist the event of next-generation infrastructure whereas serving to handle AI system bottlenecks.
“SK hynix has laid the inspiration to strengthen its AI management with HBM4E based mostly on its market-leading technological capabilities and manufacturing experience,” stated Ahn Hyun, President and Chief Growth Officer, including, “By means of shut collaboration with our companions, we are going to ship the worth wanted out there whereas reinforcing our expertise management as a full-stack AI reminiscence creator.”
About SK hynix Inc.
SK hynix Inc., headquartered in Korea, is the world’s top-tier semiconductor provider providing Dynamic Random Entry Reminiscence chips (“DRAM”) and flash reminiscence chips (“NAND flash”) for a variety of distinguished clients globally. The Firm’s shares are traded on the Korea Trade, and the International Depository shares are listed on the Luxembourg Inventory Trade. Additional details about SK hynix is offered at www.skhynix.com, information.skhynix.com.
